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AP4226M Advanced Power Electronics Corp. Low On-Resistance Simple Drive Requirement Dual N MOSFET Package SO-8 S1 G1 D2 D1 D1 G2 S2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 18m 8.2A Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 20 8.2 6.7 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 201211031 AP4226M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.03 15 20 5 12 12 8 31 12 320 230 Max. Units 18 28 3 1 25 100 30 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= 20V ID=8A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1450 2320 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/s Min. - Typ. 27 18 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on Min. copper pad. AP4226M 35 35 T A =25 o C 28 10V 5.0V 4.0V ID , Drain Current (A) 28 T A =150 o C 10V 5.0V 4.0V ID , Drain Current (A) 21 21 14 14 7 7 V G =3.0V V G =3.0V 0 0 1 1 2 2 3 0 0 1 1 2 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 I D =6.0A T A =25 60 1.6 I D =6A V GS =10V Normalized RDS(ON) 2 4 6 8 10 12 1.4 RDS(ON) (m ) 40 1.2 1 20 0.8 0 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.50 10 2.25 IS(A) 1 T j =150 o C T j =25 o C 0.1 0 0.4 0.8 1.2 1.6 VGS(th) (V) 2.00 1.75 1.50 1.25 1.00 -50 0 50 100 150 V SD ,Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4226M 16 10000 f=1.0MHz I D =8A VGS , Gate to Source Voltage (V) 12 C (pF) V DS =15V V DS =20V V DS =24V Ciss 1000 8 Coss Crss 100 4 0 0 10 20 30 40 50 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 100us 10 Normalized Thermal Response (R thja) 0.2 1ms 0.1 0.1 0.05 ID (A) 1 10ms 100ms 1s 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135/W 0.1 T c =25 o C Single Pulse 0.01 0.1 1 10 DC 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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